PDQ2215 mosfets equivalent, dual p-channel mosfets.
* -20V, -3A, RDS(ON) =85mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications
.
SOT23-6 Dual Pin Configuration
D1 S1 D2
D1
D2
G1 S2 G2 G1
G2 S1
S2
BVDSS -20V
RDSON 85m
ID -3A
Features
These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
Image gallery
Download